Cree Plans To Invest $1 Billion To Expand SiC Capacity

- Oct 16, 2019-

On May 7, Cree, Inc. announced that it will invest $1 billion to expand SiC silicon carbide capacity as part of its long-term growth strategy, building a state-of-the-art facility at its US headquarters in Durham, North Carolina. The technology is automated with a 200mm SiC silicon carbide production plant and a material super factory.

This investment is the company's largest investment to date, providing kinetic energy for Wolfspeed SiC silicon carbide and GaN-on-SiC silicon carbide GaN business. Upon completion in 2024, these plants will greatly enhance the company's SiC silicon carbide material performance and wafer fabrication capacity, making the wide bandgap semiconductor material solution a huge technological shift for the automotive, communications infrastructure and industrial markets.

Mr. GreggLowe, CEO of Cree, said: “We are constantly seeing the benefits of using SiC silicon carbide in the automotive and communications facilities to drive innovation. However, the existing supply is far from meeting our SiC The demand for silicon carbide. Today, we announced the company's largest investment in manufacturing to date, which will greatly increase supply and help customers to provide transformative products and services to the market. This is huge in equipment, infrastructure, and company manpower. The investment will significantly increase our production capacity. Compared with the first quarter of FY2017 (that is, the first phase of our expansion of production capacity), we can bring 30 times the growth of SiC silicon carbide wafer manufacturing capacity and 30 of material production. Double growth. We believe this will enable us to meet the expected growth of Wolfspeed SiC silicon carbide materials and devices over the next five years and beyond."

The program will provide additional capacity for the industry's leading Wolfspeed SiC silicon carbide business. By adding existing building facilities, the 253,000-square-foot 200mm power and RF RF wafer fabrication facility is the first step to meet anticipated market demand. The new NorthFab will be designed to fully meet the automotive certification of the factory, which will provide a surface area of 18 times that of today's existing wafers, with 150mm wafers in the beginning. The company will transform the existing production and materials plant in Durham into a material super factory.

Cree CEO GreggLowe also said: "These SiC silicon carbide manufacturing super factories will accelerate innovation in today's fastest growing market. By providing solutions to help improve the mileage of EV electric vehicles and reduce charging time, while supporting 5G The deployment of the network around the world. We believe this represents the largest capital investment in SiC silicon carbide and GaN GaN technology and manufacturing, and is also a financially responsible way. By adopting existing plants and installing them With some of the new tools, we believe we can achieve the 200mmfab with the most advanced technology, and the cost is only about 1/3 of a new fab."

The expanded park will create high-tech employment opportunities and provide advanced manufacturing talent development plans. Cree plans to conduct training programs with state, local and four-year institutions to provide a talent pool for the long-term, high-end employment and growth opportunities that the new facility brings.